Dependence of Polarization on Temperature Coefficient Resistance of (Ba,Sr)TiO[sub 3] Thin Films Post-Treated by RTA

Abstract

The temperature coefficient of resistance (TCR) characteristics of (BST)/Pt thin-film resistors are studied for the BST films with rapid thermal annealing (RTA) treatments. The polarizations induced by bias voltages greatly influence the TCR characteristics. The RTA-treated BST thin film exhibits negative TCR (NTCR) behavior at a negative voltage, but, intriguingly, positive TCR (PTCR) behavior at a positive voltage. According to the leakage current analysis, Schottky emission dominates the negatively biased current at the upper interface, but Heywang barrier scattering confines the positive biased current. © 2003 The Electrochemical Society. All rights reserved.