IEEE Electron Device Letters · 2009 · 13 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsMemory DevicesMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor Thin FilmsThin-film MaterialsThin-film TransistorsFabricationMemory MaterialsNanoelectronic Memory DevicesNonvolatile MemoryNonvolatile Memory DevicesNonvolatile Memory MaterialsOxide Thin-film TransistorsReadout
A two-transistor-type nonvolatile memory cell composed of one-access and one-memory thin-film transistors (TFTs) was demonstrated. ZnO and poly(vinylidene fluoride-trifluoroethylene) were employed as semiconducting channels for both TFTs and ferroelectric-gate insulator for memory TFT, respectively, in which the cell structures and fabrication procedures were so carefully designed and optimized as to effectively incorporate both TFTs on the same glass substrate without any critical process damage even below 200°C. The fabricated memory cell successfully showed the write and nondestructive readout operations.
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Pentacene-based radio-frequency identification circuitry
P. F. Baude, D. A. Ender, M. A. Haase et al. · Applied Physics Letters · 2003 · 755 citations
Natural Sciences, Electrical Engineering, Materials Science +15