I-MOS Transistor With an Elevated Silicon–Germanium Impact-Ionization Region for Bandgap Engineering

Abstract

An impact-ionization MOS (I-MOS) transistor with an elevated impact-ionization region (I-region) and excellent subthreshold swing of 3.2 mV/dec at room temperature is demonstrated. An elevated Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.75 </sub> Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.25</sub> region is integrated and employed to engineer the bandgap and impact-ionization rate in the I-region. Compared to a device with a Si I-region, an I-MOS device with a Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.75</sub> Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.25</sub> I-region shows significantly enhanced performance due to the smaller bandgap of the I-region and the enhanced impact-ionization rate. For the I-MOS device with a Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.75</sub> Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.25</sub> I-region, the breakdown voltage is also reduced, and a significant drive current enhancement is achieved at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> -V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> =1 V and a gate length of 80 nm