IEEE Transactions on Electron Devices · 1967 · 26 citations · 17 references
EngineeringElectrical EngineeringPhysicsElectronic MaterialsMicrowave EngineeringSemiconductor MaterialsDevice CharacterizationElectrical ConductivityHigh-frequency Semiconductor DevicesMicrowave MeasurementsSemiconductor Device MaterialsSemiconductor PhysicsCurrent DensityCurrent Density DistributionEnergy RelaxationField Strength DependenceGallium ArsenideMicrowave DevicesMicrowave HeatingMicrowave Heating Mechanisms
Determination of the current density/field strength characteristic of n-GaAs in the range of negative differential mobility is made difficult by field distortions and instabilities. In the present work these problems are eliminated by using microwave heating of the electrons. Various microwave techniques and the results obtained by them are described. Data on materials of various conductivities are presented. The influence of energy relaxation and material properties are discussed.
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