Publication | Closed Access
A comparison of state-of-the-art NMOS and SiGe HBT devices for analog/mixed-signal/RF circuit applications
67
Citations
6
References
2004
Year
Unknown Venue
Electrical EngineeringEngineeringAnalog/mixed-signal/rf Circuit ApplicationsRf SemiconductorHigh-frequency DeviceCircuit SystemMixed-signal Integrated CircuitAnalog DesignSige Bjt PerformanceRf Cmos PerformanceComputer EngineeringState-of-the-art NmosSige Hbt DevicesMicroelectronicsRf SubsystemElectromagnetic CompatibilitySige Hbts Bicmos
RF CMOS performance from a 90nm derivative communications process technology is compared to SiGe BJT performance. NMOS performance at f/sub T//f/sub max/ = 209/248 GHz (70nm) and f/sub T//f/sub max/ = 166/277 GHz (80nm) with F/sub min/ at 0.3 dB (2GHz) and 0.6 dB (10GHz) suggests there is no major reason to implement SiGe HBTs BiCMOS in an integrated communications process.
| Year | Citations | |
|---|---|---|
Page 1
Page 1