Japanese Journal of Applied Physics · 1987 · 12 citations · 5 references
EngineeringElectrical EngineeringElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingLevel MeasurementSemiconductor PhysicsThermal Properties Of SemiconductorsCurrent MeasurementInitializationLevels
A new and simple method to determine the capture cross section of deep levels by Thermally Stimulated Current measurement is demonstrated. The cross section is obtained by analysis of the variation in the peak height with the initialization dose. The examplar values of the cross section at 4 K estimated by this method for two levels in semiinsulating GaAs were 2×10 -15 cm 2 and 1×10 -15 cm 2 .
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