Japanese Journal of Applied Physics · 1986 · 29 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsSpectroscopySemiconducting MaterialsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsThermal Properties Of SemiconductorsElectrode InterfacesGuard Electrode DesignIonizationIonization EnergyLevelsTraps
Deep levels in semi-insulating GaAs were observed at low temperatures by means of improved thermally stimulated current (TSC) spectroscopy. The improvement was done by thinning the specimen and adding a guard ring electrode. The ionization energy of the levels was limited to below 0.7 eV. The concentration of 10 13 cm -3 was easily measured with an electrode area of 5 mm 2 . Spectra by electron traps and hole traps were separated by changing the bias polarity.
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<i>Photoconductivity of Solids</i>
Richard H. Bube, Stuart A. Rice · Physics Today · 1961 · 1.7K citations