Intrinsic 4H-SiC parameters study by temperature behaviour analysis of Schottky diodes

Recent advances in Schottky barrier concepts

R. T. Tung · Materials Science and Engineering R Reports · 2001 · 1.2K citations

Natural Sciences, Materials Science, Physics +9

Electron transport of inhomogeneous Schottky barriers: A numerical study

James P. Sullivan, R. T. Tung, M.R. Pinto et al. · Journal of Applied Physics · 1991 · 736 citations

Engineering, Electrical Engineering, Materials Science +17

Current transport in metal-semiconductor barriers

C.R. Crowell, Simon M. Sze · Solid-State Electronics · 1966 · 714 citations

Engineering, Electrical Engineering, Materials Science +14

Richardson’s constant in inhomogeneous silicon carbide Schottky contacts

Fabrizio Roccaforte, Francesco La Via, V. Raineri et al. · Journal of Applied Physics · 2003 · 237 citations

Engineering, Electrical Engineering, Materials Science +17

Nitrogen donors in 4<i>H</i>-silicon carbide

Werner Götz, Adolf Schöner, Gerhard Pensl et al. · Journal of Applied Physics · 1993 · 202 citations

Natural Sciences, Materials Science, Physics +17