A monolithic W-band three-stage LNA using 0.1 mu m InAlAs/InGaAs/InP HEMT technology

Abstract

A monolithic W-band three-stage low-noise amplifier (LNA) based on 0.1- mu m pseudomorphic (PM) InAlAs/InGaAs/InP high-electron-mobility transistors (HEMTs) has been developed. This LNA has demonstrated a noise figure of 4.3 dB and an associated small-signal gain of 19 dB at 100 GHz with a low DC power consumption of 20 mW. This demonstrates the potential of InP HEMT technology for higher millimeter-wave applications. The gain and noise performance is comparable with the best reported results of the monolithic W-band LNA using GaAs-based PM HEMTs even at this first iteration phase of the development. The HEMTs discussed consume only 30% of the DC power typically needed in the GaAs-based HEMT LNAs with the same device periphery and design approach.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>