2002 · 32 citations · 8 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave MeasurementsRadio-frequency Integrated CircuitsAverage GainBandwidthCoplanar WaveguidesDevice FabricationGainHigh-gain AmplifiersMaximum GainMillimeter-wave Integrated Circuits
A high-gain InP MMIC (millimeter-wave IC) cascode amplifier is developed which has 8.0 dB of average gain from 75 to 100 GHz when biased for maximum bandwidth, and more than 121 dB of gain at 80 GHz at the maximum-gain bias point, representing the highest gains reported to date, obtained from MMICs at W-band (75-100 GHz). Lattice-matched InGaAs-InAlAs HEMTs with 0.1 mu m gates are the active devices. Coplanar waveguide (CPW) is the transmission medium for this MMIC with overall chip dimensions of 600 mu m by 500 mu m. Device fabrication, modeling circuit design, and measurement results are reported.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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W-band InGaAs HEMT low noise amplifiers
K.H.G. Duh, P.C. Chao, P. Ho et al. · 1990 · 67 citations
5-100 GHz InP CPW MMIC 7-section distributed amplifier
R. Majidi-Ahy, M. Riaziat, C. Nishimoto et al. · 2002 · 56 citations
94 GHz InP MMIC five-section distributed amplifier
R. Majidi-Ahy, M. Riaziat, C. Nishimoto et al. · Electronics Letters · 1990 · 28 citations
N. Camilleri, P. W. Chye, P. E. Gregory et al. · 2002 · 27 citations