100 GHz high-gain InP MMIC cascode amplifier

Abstract

A high-gain InP MMIC (millimeter-wave IC) cascode amplifier is developed which has 8.0 dB of average gain from 75 to 100 GHz when biased for maximum bandwidth, and more than 121 dB of gain at 80 GHz at the maximum-gain bias point, representing the highest gains reported to date, obtained from MMICs at W-band (75-100 GHz). Lattice-matched InGaAs-InAlAs HEMTs with 0.1 mu m gates are the active devices. Coplanar waveguide (CPW) is the transmission medium for this MMIC with overall chip dimensions of 600 mu m by 500 mu m. Device fabrication, modeling circuit design, and measurement results are reported.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>