Back-incident SiGe-Si multiple quantum-well resonant-cavity-enhanced photodetectors for 1.3-μm operation

Abstract

A back-incident Si/sub 0.65/Ge/sub 0.35//Si multiple quantum-well resonant-cavity-enhanced photodetector operating near 1.3 μm is demonstrated on a separation-by-implantation-oxygen substrate. The resonant cavity is composed of an electron-beam evaporated SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -Si distributed Bragg reflector as a top mirror and the interface between the buried SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and the Si substrate as a bottom mirror. We have obtained the responsivity as high as 31 mA/W at 1.305 μm and the full width at half maximum of 14 nm.