Quantum dot resonant cavity photodiode with operationnear 1.3 µm wavelength

Abstract

It is shown that strained-layer InGaAs quantum dots grown on GaAs substrates can extend the operating wavelength of GaAs-based optoelectronic devices to wavelengths near 1.3 µm. Specifically, a 1.27 µm resonant-cavity photodiode with a quantum dot absorbing region is demonstrated. This photodiode exhibits a peak external quantum efficiency of 49% with a spectral bandwidth of 1.2 nm.