Effect of phonon bottleneck on quantum-dot laser performance

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Applied Physics Letters

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Emission from discrete levels in self-formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck

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Applied Physics Letters

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Temperature dependent lasing characteristics of multi-stacked quantum dot lasers

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Applied Physics Letters

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Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer

Hajime Shoji, Yoshiaki Nakata, Kohki Mukai, +4

Japanese Journal of Applied Physics

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InP-Based Monolithically Integrated Photonic Devices for Digital Coherent Transmission

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IEEE Journal of Selected Topics in Quantum Electronics

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Continous-wave lasing operation of 1.3-μm wavelength InP-based photonic crystal surface-emitting lasers using MOVPE regrowth

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Optics Express

Exciton diamagnetic shifts in self-formed closely stacked InAs/GaAs quantum dots

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Physical review. B, Condensed matter

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Growth and optical evaluation of InGaAs/GaAs quantum dots self-formed during alternate supply of precursors

Kohki Mukai, N. Ohtsuka, Hajime Shoji, +1

Applied Surface Science

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1.3 µm InGaAs/InAlGaAs Strained Quantum Well Lasers on InGaAs Ternary Substrates

Koji Otsubo, Y. Nishijima, Toru Uchida, +3

Japanese Journal of Applied Physics

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Inter-layer light transition in hybrid III-V/Si waveguides integrated by µ-transfer printing

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Optics Express

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