IEEE Transactions on Magnetics · 1996 · 10 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceMemoryMicroelectronicsSemiconductor DevicesMemory DevicesMemory Subsystem DesignMicrofabrication MaterialsDie ArchitectureHigh PerformanceHigh-density Memory MaterialsMemory Cell DesignMicroscale FabricationNon-volatile Memory Design
Memory elements 0.2 microns wide made from multilayer GMR material have been studied experimentally and analytically. When etched into narrow elements, the 12 to 15% material exhibits a memory mode with large outputs of /spl plusmn/8%. Analysis shows that the mode is suitable for multi-megabit die with high performance if yield can be achieved.
2
Dynamic switching process of sandwich-structured MR elements
H.Y. Yoo, A.V. Pohm, Jae Hur et al. · IEEE Transactions on Magnetics · 1989 · 26 citations
Natural Sciences, Materials Engineering, Materials Science +17