Small · 2009 · 20 citations · 22 references
Top-gate Field-effect TransistorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringPlastic SubstratesNanoelectronicsNanotechnologyElectronic EngineeringApplied PhysicsSi NanowiresTop-gate FetsSemiconductor Device FabricationIntegrated CircuitsSemiconductor Device
Top-gate field-effect transistors (FETs) with n-channels consisting of n+–p–n+ doped Si nanowires are constructed on plastic substrates via the conventional top-down approach. These top-gate FETs show excellent enhancement-mode characteristics (see image).
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High Performance Silicon Nanowire Field Effect Transistors
Yi Cui, Zhaohui Zhong, Deli Wang et al. · Nano Letters · 2003 · 2.1K citations
Semiconductors, Semiconductor Technology, Electrical Engineering +15