Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2013 · 14 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsPower ElectronicsSemiconductor DevicesDevice CharacterizationSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown MechanismsBreakdown VoltageGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesGallium Nitride Power ElectronicsLeakagePower Electronics DevicesVoltage
Abstract InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a high breakdown voltage is reported. The observed off‐state breakdown voltage was over 550 V and the specific on‐state resistance was 0.7 mΩcm 2 in the fabricated device with the spacing between the gate and drain (L gd ) of 8 µm. After the measurement, the device was found not to be broken when it was observed by an optical microscope. The off‐state breakdown voltage might be about 550 V in the device with L gd of 5 µm, because the increase of the off‐state leakage current was observed at the drain voltage of 550 V. If the off‐state breakdown voltage was proportional to L gd , the speculated off‐state breakdown voltage from this result was 880 V in the device with L gd of 8 µm. Therefore, InAlN/GaN HEMTs have potential for application as power electronics devices. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)