2002 · 11 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesMultistage AmplifiersElectronic Circuit DesignGaas Microwave Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsInput Bias CurrentLow-noise AmplifiersNoise FigureNoise Figure AnalysisYield Enhancement
An X-band monolithic four-stage low-noise amplifier (LNA) with 0.5- mu m-gate pulse-doped GaAs MESFETs has been demonstrated. At 12 GHZ this LNA has a noise figure of 1.67 dB, with 18.5-dB gain, an input VSWR of less than 1.6:1, and an output VSWR of less than 1.8:1. Noise figure, gain, and VSWRs show very little bias current dependence due to the exceptional features of the pulse-doped structure FETs and the optimized circuit design. Insensitivity to bias current implies performance stability in the face of process fluctuations. Thus, high yield is obtained, making this device suitable for mass production.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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W-band InGaAs HEMT low noise amplifiers
K.H.G. Duh, P.C. Chao, P. Ho et al. · 1990 · 67 citations
Pulse-doped GaAs MESFETs with planar self-aligned gate for MMIC
S. Nakajima, K. Otobe, N. Kuwata et al. · 2002 · 21 citations