Applied Physics Letters · 1982 · 67 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesP-n JunctionsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsDouble Heterostructure DevicesDouble HeterostructuresHeterostructure LasersIntegrated Semiconductor LasersMolecular Beam EpitaxySemiconductor Laser DiodesSemiconductor Laser FabricationTunnel Junctions
An integrated multilayer laser consisting of three double heterostructure GaAs laser diodes connected in series by reversed biased p+n+ tunnel junctions have been grown by molecular beam epitaxy. The lasers operate at currents comparable to single double heterostructure lasers but at approximately three times the single laser voltage.
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Integrated multijunction GaAs photodetector with high output voltage
M. Ilegems, B. Schwartz, L. A. Koszi et al. · Applied Physics Letters · 1978 · 40 citations
W. T. Tsang, R. A. Logan · Applied Physics Letters · 1980 · 22 citations · Full text