Applied Physics Letters · 1983 · 18 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceDopingEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor SurfacesChannelingDiffraction PatternsEpitaxial Growth Of Wide-bandgap SemiconductorsEpitaxial OverlayersMolecular Beam EpitaxySegregationSilicon EpitaxyVacuum Conditions
Si overlayers have been grown under ultrahigh vacuum conditions on GaP(100) single crystals by means of molecular beam epitaxy. For growth temperatures of 300 °C and higher (2×1) low-energy electron diffraction patterns of the Si overlayers were seen at all overlayer thicknesses produced (8–10 000 Å). By means of Auger electron spectroscopy segregation of P and Ga on top of the grown Si surface was measured. With Rutherford backscattering using ion channeling we found Si minimum channeling yields of 3% in the GaP:Si(100) heterostructures, which corresponds well to the yield of pure monocrystalline (100) Si. Two methods are described to eliminate the Ga and P segregation.
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Electron mobilities in modulation-doped semiconductor heterojunction superlattices
R. Dingle, H. L. Störmer, A. C. Gossard et al. · Applied Physics Letters · 1978 · 1.5K citations
Theory of a Wide-Gap Emitter for Transistors
H. Kroemer · Proceedings of the IRE · 1957 · 457 citations