Electrochemical and Solid-State Letters · 2011 · 13 citations · 14 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsInterface ScienceSemiconductor MaterialsInterface EngineeringIon ImplantationMetal-semiconductor ContactsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesAnnealingAnnealing Temperature EffectsGrain BoundariesInterface FormationPost-implantation AnnealingSegregationSheet ResistanceThermal Stability
In this work, we address the effect of C+ ion implantation on the formation of nickel-germanosilicide NiSi0.8Ge0.2 on relaxed Si0.8Ge0.2 layers. The layer morphology and sheet resistance are investigated as a function of the C+ implantation dose and annealing temperature. The presence of C atoms increases the thermal stability of NiSiGe by about 200°C. We demonstrate that the carbon atoms retard the Ni germanosilicidation rate, stabilize the NiSiGe phase. Due to C segregation at grain boundaries and interface during annealing, the NiSi0.8Ge0.2/Si0.8Ge0.2 interface is smoothed.
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Improvement in NiSi/Si contact properties with C-implantation
Osamu Nakatsuka, Kazuya Okubo, Akira Sakai et al. · Microelectronic Engineering · 2005 · 60 citations