B. Zhang

Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

Qing‐Tai Zhao, Wen-Jie Yu, B. Zhang et al. · Solid-State Electronics · 2012 · 31 citations

Electrical Engineering, Si0.5ge0.5 Source, Engineering +9

High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Wen-Jie Yu, B. Zhang, Qing‐Tai Zhao et al. · Solid-State Electronics · 2011 · 21 citations

High Mobility Compressive, Electrical Engineering, Engineering +4

Hole Mobilities of $\hbox{Si/Si}_{0.5}\hbox{Ge}_{0.5}$ Quantum-Well Transistor on SOI and Strained SOI

Wensong Yu, B. Zhang, Qing‐Tai Zhao et al. · IEEE Electron Device Letters · 2012 · 15 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Impact of Si cap, strain and temperature on the hole mobility of (s)Si/sSiGe/(s)SOI quantum-well p-MOSFETs

B. Zhang, C. Liu, Yi Zhao et al. · Microelectronic Engineering · 2013 · 14 citations

Electrical Engineering, Soi Quantum-well P-mosfets, Engineering +8

Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacts by C+ Pre-Implantation

B. Zhang, Qing‐Tai Zhao, Dan Buca et al. · Electrochemical and Solid-State Letters · 2011 · 13 citations

Materials Science, Electrical Engineering, Ion Implantation +13