Publication | Closed Access
The impact of oxynitride process, deuterium annealing and STI stress to1/f noise of 0.11 μm CMOS
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References
2004
Year
Unknown Venue
Electrical EngineeringμM CmosEngineeringIon ImplantationPhysicsSemiconductor DeviceNanoelectronicsBias Temperature InstabilityApplied PhysicsSemiconductor Device FabricationDeuterium AnnealingPlasma NitridationNo AnnealingMicroelectronicsBeyond CmosOxynitride Process
In this paper, it is shown that the 1/f noise is improved by plasma nitridation instead of NO annealing and deuterium annealing after metal formation. Additionally, dependence of the noise on distance between gate electrode and STI edge is reported for the first time.
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