Proceedings of the IEEE · 1981 · 28 citations · 32 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignBipolar Junction TransistorsCmos Circuit DesignDevice ScalingIntegrated Circuit DesignIntegrated Circuit DevicesSemiconductor Device MaterialsDegradationDevice OptimizationHeterojunction Bipolar TransistorsLogic GatesPolysiliconSchottky Barrier ContactsSchottky Barrier DiodesSelf-aligned Structures
It is shown that bipolar circuits can continue to play an important role in high-performance LSI and VLSI circuits, because power supply voltages and logic swings can be minimized independently of dimensions, and because the speed degradation due to on-chip wiring capacitances is less severe than in MOSFET/MESFET types of circuit. General performance improvements (in speed and packing density) of logic gates are obtained by increasing transistor f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> , and decreasing parasitic capacitances, series resistances and device areas, by using oxide isolation, self-aligned techniques and polysilicon electrodes. Fast switching diodes (such as Schottky barrier diodes and lateral polydiodes) improve the flexibility of circuit design. Logic circuits (such as I <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> L, LS, DTL, ISL, STL, ECL, and NTL), which already perform in LSI and VLSI circuits or are realistic proposals for them, are discussed.
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