Journal of Physics D Applied Physics · 2007 · 18 citations · 53 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsAlloysEpitaxial GrowthMetal OxidesOxide SemiconductorsThin-film MaterialsX-ray DiffractionCrystalline StructureDetectorsEpitaxial MaterialsEpitaxial Thin FilmsMetal-semiconductor InterfacesMetal-semiconductor-metal PhotodetectorsMetallic Thin FilmsThin Oxide Films
In this work, we describe the homo- and hetero-epitaxial growth of hexagonal and cubic MgxZn1−xO thin films on lattice matched substrates of c-Al2O3, ZnO, MgO and SrTiO3. The crystalline quality, composition and epitaxial nature of the alloy films are obtained by x-ray diffraction and Rutherford backscattering spectroscopy (RBS) techniques. The RBS channeling yields are in the range 3–8% for homoepitaxial and hetero-epitaxial thin films. The metal–semiconductor–metal and ultraviolet detectors were fabricated on hexagonal and cubic MgxZn1−xO thin films and the leakage current and UV-visible rejection ratio are correlated with the epitaxial relationship between the film and substrates.
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Solid state chemistry and its applications
D. Beruto · Materials Chemistry and Physics · 1984 · 1.6K citations
Mg x Zn 1−x O as a II–VI widegap semiconductor alloy
Akira Ohtomo, M. Kawasaki, Takashi Koida et al. · Applied Physics Letters · 1998 · 1.5K citations · Full text