Digital Single Event Transient Trends With Technology Node Scaling

Abstract

We have measured the single-event-transient (SET) width as a function of cross-section over three CMOS bulk/epitaxial technology nodes (0.25, 0.18 and 0.13 mum) using an identically scaled programmable-delay temporal-latch technique. Both the maximum width of the SET pulse and the cross-section are shown to depend primarily on the supply voltage, with a substantial increase in transient width and cross-section with lower operating potentials