Concepedia

Explorations for high performance SiGe-heterojunction bipolar transistor integration

P. Deixler, H.G.A. Huizing, J.J.T.M. Donkers, J.H. Klootwijk, D.M.H. Hartskeerl, W.B. de Boer, R.J. Havens, Ramses van der Toorn, J.C.J. Paasschens, W.J. Kloosterman,

2002 · 17 citations · 2 references

DOI

Concepts

EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignIntegrated Circuit DevicesIntegrated Circuit FabricationMicrowave Integrated CircuitsRadio-frequency Integrated CircuitsCircuit IntegrationHeterojunction Bipolar TransistorsMetal-oxide-semiconductor Field-effect Transistor ModelingSilicon Germanium Bipolar TransistorTransistor Output Characteristics

Abstract

Presents a SiGe HBT integration-study, introducing a low-complexity integration-scheme. We demonstrate a stepped box-like SiGe base-profile designed to reduce reverse Early effects, achieving f/sub T/=55 GHz and BV/sub CEO/=2.7 V. The transistor characteristics are well modeled by Mextram 504.

References

2

Enhanced Diffusion in Silicon Processing

N. E. B. Cowern, Conor Rafferty · MRS Bulletin · 2000 · 37 citations

Engineering, Materials Engineering, Materials Science +14

A low-complexity 62-GHz fT SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget

Jan Grahn, Hans Fosshaug, M. Jargelius et al. · Solid-State Electronics · 2000 · 24 citations

Engineering, Electrical Engineering, Materials Science +16