Variation of the intrinsic stress gradient in thin aluminum nitride films

Abstract

The intrinsic stress gradient variation of thin aluminum nitride (AlN) films is the central objective in this paper. For the first time, significant influence parameters on the stress gradient are identified and varied during the deposition process. The process power induced in the plasma and the gas flow ratio of the sputter gases argon and nitrogen are the two major parameters for controlling the stress gradient of deposited AlN films. The controlled avoidance as well as the controlled generation of positive and negative gradients is shown. The stress gradient was investigated by analysis of released one-side clamped cantilever test structures.