A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects

Abstract

A semi-empirical analytical model for the DC characteristics of both n- and p-channel polysilicon thin-film transistors is described. The model is suitable for implementation in a SPICE circuit simulator. Our semi-empirical approach results in a physically based model with a minimum of parameters, which are readily related to the device structure and fabrication process. The intrinsic DC model describes all four regimes of operation: leakage, subthreshold, above threshold, and kink. The effects of temperature and channel length are also included in the short-channel model.