Japanese Journal of Applied Physics · 2005 · 35 citations · 13 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsNanostructured Electronic MaterialsOptical Properties Of SemiconductorsQuantum ConfinementQuantum DotsSemiconductor NanomaterialsSemiconductor PhysicsAtomic Force Microscopy AnalysisCrystallographic OrientationMolecular Beam EpitaxyPhotoluminescencePhotoluminescence SpectroscopyQuantum Dot MaterialsSemiconductor Quantum Dots
The As flux effect on InAs quantum dots formed by gas source molecular beam epitaxy on InP substrates, oriented following the (311)B crystallographic direction has been studied. Atomic force microscopy images show that the quantum dot (QD) density dramatically increases and quantum dot sizes decrease, when decreasing the As pressure. Moreover, the size dispersion is narrowed. Photoluminescence measurements on the high QD density samples is shifted to higher energy, toward the telecommunication important 1.55 µm emission.
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