Long-wavelength InP-based quantum-dash lasers

Abstract

Self-assembled InAs quantum-dash (QD) lasers with emission wavelengths between 1.54 and 1.78 μm based on the AlGaInAs-AlInAs-InP material system were grown by gas source molecular beam epitaxy. Threshold current densities below 1 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> were achieved for 1-mm-long mirror coated broad area lasers with a stack of four QD layers. The devices can be operated up to 80/spl deg/C in pulsed mode and show a high T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> value of 84 K up to 35/spl deg/C. In comparison to quantum-well lasers a much lower temperature sensitivity of the emission wavelength was achieved. The temperature shift of /spl Delta//spl lambda///spl Delta/T = 0.12 nm/K is as low as that caused by the refractive index change.