An analytical model of MAGFET sensitivity including secondary effects using a continuous description of the geometric correction factor G

Abstract

An analytical model of the sensitivity of magnetic field-effect transistors (MAGFET's) is presented. The model includes secondary and parasitic geometric effects as well as operating point dependencies. In order to get a continuous mathematical description for the sensitivity, we introduce a continuous function for the geometric correction factor G. This description of G is not limited to MAGFET's and can be used for any magnetic device.