Integrated semiconductor magnetic field sensors

TLDR

Magnetic field sensors convert magnetic fields into electronic signals, and integrated semiconductor sensors—especially silicon—leverage galvanomagnetic effects and are increasingly developed for diverse applications because they combine sensing elements with on‑chip signal processing. The paper aims to develop inexpensive, high‑performance, batch‑fabricated integrated silicon magnetic sensors for microprocessor interfaces and reviews recent progress, modeling, and integration strategies. It surveys integrated silicon magnetic devices—including Hall plates, field‑effect transistors, bipolar magnetotransistors, magnetodiodes, and current‑domain magnetometers—alongside III‑V developments, bulk Hall‑effect references, and discusses modeling and IC integration with in‑situ amplification and temperature compensation.

Abstract

A magnetic field sensor is an entrance transducer that converts a magnetic field into an electronic signal. Semiconductor magnetic field sensors exploit the galvanomagnetic effects due to the Lorentz force on charge carriers. Integrated semiconductor, notably silicon, magnetic field sensors, are manufactured using integrated circuit technologies. Integrated sensors are being increasingly developed for a variety of applications in view of the advantage offered by the integration of the magnetic field sensitive element together with support and signal processing circuitry on the same semiconductor chip. The ultimate goal is to develop a broad range of inexpensive batch-fabricated high-performance sensors interfaced with the rapidly proliferating microprocessor. This review aims at the recent progress in integrated silicon magnetic devices such as integrated Hall plates, magnetic field-effect transistors, vertical and lateral bipolar magnetotransistors, magnetodiodes, and current-domain magnetometers. The current development of integrated magnetic field sensors based on III-V semiconductors is described as well. Bulk Hall-effect devices are also reviewed and serve to define terms of performance reference. Magnetic device modeling and the incorporation of magnetic devices into an integrated circuit offering in situ amplification and compensation of offset and temperature effects are further topics of this paper. Silicon will continue to be aggressively exploited in a variety of magnetic (and other) sensor applications, complementary to its traditional role as integrated circuit material.