New window-structure InGaAlP visible light laser diodes by self-selective Zn diffusion-induced disordering

Abstract

The behavior of Zn diffusion in InGaAlP double heterostructures during a second metalorganic chemical vapor deposition (MOCVD) growth was investigated, and it found that the behavior of Zn diffusion strongly depends on the presence of an n-GaAs capping layer. A process for InGaAlP window-structure InGaAlP laser diodes was designed using this unique diffusion behavior and disordering of a natural superlattice. A window structure realizing a high power operation was successfully fabricated. A maximum output power above 80 mW was obtained for continuous wave (CW) operation, and 400 mW for pulsed operation.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>