Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2012 · 11 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceInterface ScienceSemiconductor MaterialsSurface ScienceAtomic Layer DepositionMetal OxidesOxide SemiconductorsSemiconductor InterfacesSurface PhysicsX-ray Photoelectron SpectroscopyBand OffsetsInterfacial Oxide LayersOxide Electronic StructureSemiconducting Oxide MaterialsSurface Oxidation StatesThin Oxide LayersValence BandValence Band Structure
Abstract The valence band offset (VBO) at the interface between indium nitride (InN) and selected oxide materials (Al 2 O 3 , TiO 2 , In 2 O 3 and HfO 2 ) is determined using X‐ray photoelectron spectroscopy (XPS). For exact VBO determination, InN samples with oxide cap layers of varying thickness are investigated. The VBO values are extrapolated by linear regression of the thickness dependent energetic distances ΔE between the valence band maxima (VBM) at the oxide and InN surface and their corresponding heterointerface. The determined VBO values are (2.7 ± 0.2) eV for Al 2 O 3 /InN, (1.8 ± 0.2) eV for TiO 2 /InN, (1.5 ± 0.2) eV for In 2 O 3 /InN, (1.3 ± 0.2) eV for e‐beam evaporated HfO 2 on InN, and (2.0 ± 0.2) eV for atomic layer deposited HfO 2 on InN. In some cases the oxide deposition process leads to an oxidation of the InN film at the oxide/InN interface (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)