0.5-2.5 GHz, 10W MMIC Power Amplifier in GaN HEMT Technology

Abstract

We report a broadband lossy matched GaN on SiC HEMT power amplifier MMIC with 15 dB gain, 0.5-2.5 GHz bandwidth, 9-13.6 W CW output power and 44.9-63.6% drain efficiency over the band. The amplifier operates from a 48 V drain supply and is packaged in a ceramic S08 package. These amplifiers are intended for use in wideband digital communication applications.