A GaAs high power RF single-pole dual throw switch IC for digital-mobile communication system

Abstract

A high power GaAs monolithic RF switch IC that can handle powers over 5 W (P1 dB: 37 dBm) with a positive 5-V control voltage was developed. This high power handling capability was achieved by using a novel circuit configuration that makes possible the feeding forward of the input-signal to the control gates. The implemented Single Pole Dual Throw switch IC integrated with the coupling capacitors using a high dielectric material, Barium Strontium Titanate, shows an insertion loss less than 0.8 dB at 1 GHz and an isolation over 25 dB in a frequency range of 0.5-1.5 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>