IEEE Transactions on Microwave Theory and Techniques · 1995 · 44 citations · 8 references
EngineeringElectrical EngineeringLow-power DesignMicroelectronicsMicrowave EngineeringCmos Circuit DesignHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMillimeter-wave CommunicationsRadio-frequency Integrated CircuitsResonant CircuitsHigh-frequency ConversionHigh-frequency OperationLc OscillatorsLow-distortion OscillatorsMicrowave SwitchesPower InputRf SwitchesVoltage Control
A novel T/R switch is proposed for high-power/low-distortion operation at a low control voltage. LC-resonant switches composed of inductors, capacitors, and switch FET's are incorporated in TX and RX arms to provide a reverse control scheme that removes the rf-voltage limitation in the transmit mode, A 1.9-GHz LC-resonant T/R switch MMIC with a total FET periphery of 3.36 mm exhibits 3rd IMR less than -40 dB for an input power up to 31 dBm when controlled at a V/-2 V. This MMIC occupies an area as small as less than 2/spl times/2 mm, This will make it possible to implement advanced T/R-switches at PCS and ISM frequencies below 5 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Novel high performance SPDT power switches using multi-gate FET's
F. McGrath, C. Varmazis, C. Kermarrec et al. · 2002 · 36 citations