High-performance GaAs switch IC's fabricated using MESFET's with two kinds of pinch-off voltages and a symmetrical pattern configuration

Abstract

GaAs MESFET switch IC's operating at low control voltages of 0/-3 V and +3/0 V have been developed for use in Personal Handy Phones using the 1.9 GHz band. The switch IC's have excellent RF characteristics, and have no need for external circuit installation. The unique points of these IC's are the use of GaAs MESFET's with two kinds of pinch-off voltages and a symmetrical source and drain pattern configuration with respect to the gate. The 0/-3 V IC had low insertion loss of 0.55 dB and 0.65 dB, and high isolation of 31 dB and 24 dB at receiving and transmitting operations, respectively. The +3/0 V IC also had excellent characteristics such as insertion loss of 0.73 dB and 0.95 dB, and isolation of 27 dB and 23 dB, respectively. Both IC's had an output power at 1 dB gain compression point of 25.4 dBm and 3rd order intercept point of more than 46 dBm.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>