IEEE Transactions on Electron Devices · 1975 · 38 citations · 2 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportCmos Circuit DesignDevice CharacterizationDevice ModelingCarrier GenerationCarrier Mobility ExtractionDeep Depletion
A modified linear sweep technique is described which allows one to rapidly determine the carrier generation rate versus semiconductor depletion width dependence exhibited by deeply depleted MOS-C structures. Although requiring more sophisticated instrumentation, the modified procedure is more flexible, more accurate, and less time-consuming than the original technique.
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