Effects of post-growth annealing on the optical properties of self-assembled GaAs/AlGaAs quantum dots

Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices

Leon J. Goldstein, Frank Glas, J. Y. Marzin et al. · Applied Physics Letters · 1985 · 893 citations

Natural Sciences, Materials Engineering, Materials Science +17

Ultranarrow Luminescence Lines from Single Quantum Dots

Marius Grundmann, J. Christen, N. N. Ledentsov et al. · Physical Review Letters · 1995 · 738 citations

Engineering, Materials Science, Condensed Matter Physics +16

Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy

D. K. Biegelsen, R. D. Bringans, John E. Northrup et al. · Physical review. B, Condensed matter · 1990 · 665 citations

Natural Sciences, Materials Science, Physics +12

Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures

D.G. Deppe, N. Holonyak · Journal of Applied Physics · 1988 · 511 citations

Engineering, Materials Engineering, Materials Science +17

Migration-Enhanced Epitaxy of GaAs and AlGaAs

Yoshiji Horíkoshi, Minoru Kawashima, Hiroshi Yamaguchi · Japanese Journal of Applied Physics · 1988 · 366 citations

Engineering, Electrical Engineering, Materials Science +15