Deposition of droplet-free films by vacuum arc evaporation-results and applications

Abstract

A pulsed high current metal ion source that produces a metallic plasma flux was designed and successfully used for film deposition. The plasma flux consists of the fully ionized plasma beam produced by a pulsed high current vacuum arc transported through a curved magnetic duct. Deposition rates of more than ten nm/s were achieved. The deposited layers are free of macroparticles, holes, and pits. Films of about 50 nm thickness have been deposited homogeneously (thickness variation below 5%) on a 4 in substrate after 300 pulses. Repetition rates are adjustable from more than 100 Hz down to a single pulse depending on the acceptable thermal input. Several applications are described in the paper: 1) deposition of hard, amorphous carbon films (diamond like carbon), 2) droplet-free TiN films for advanced applications, 3) transparent Al/sub 2/O/sub 3/ protective coatings, and 4) metallization for microelectronics.