Japanese Journal of Applied Physics · 1999 · 113 citations · 8 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsConductive MaterialsDefects In Electronic MaterialsElectrical ConductivityElectronic Structure Of SolidsSurface Chemistry Of SolidsSurface PhysicsCharge Carrier DensityDiamond SemiconductorsGas AdsorptionGas Effect On ResistivityHall ConductivityHall EffectHall Effect MeasurementsResistivity
In order to clarify the mechanism of change in resistance of the surface conductive layer exposed to oxidizing and reducing gases, the Hall effect measurements of the surface conductive layer on as-grown undoped diamond films in NO 2 and NH 3 gas atmospheres were carried out. It was found that holes were generated in the surface conductive layer by the adsorption of NO 2 gas, and the adsorption of NH 3 gas resulted in the disappearance of the holes. Morever, the dependences of gas concentration on the sheet resistivity, carrier density per unit area and Hall mobility were observed. The mechanism of change in resistance of the surface conductive layer in gas atmospheres could be explained by the proposed model based on the experimental results.
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Resistivity of chemical vapor deposited diamond films
M. I. Landstrass, K. V. Ravi · Applied Physics Letters · 1989 · 499 citations
Hydrogenating Effect of Single-Crystal Diamond Surface
Tetsuro Maki, Syozo Shikama, M. Komori et al. · Japanese Journal of Applied Physics · 1992 · 177 citations