GaN-On-Si Reliability: A Comparative Study Between Process Platforms

Abstract

GaN-on-Si transistors are put through an extensive suite of reliability tests in order to accurately assess the drift characteristics of the technology. Data is presented on DC-HTOL, RF-HTOL, and 3-temperature DC tests. In all cases results are compared with the previous generation of technology and reveal improved results. Highlights include an increase in the activation energy from 1.7eV to 2.0eV and a 50% reduction in the 20-year drift rate as predicted by DC-HTOL testing