Ink-Jet-Printed Zinc–Tin–Oxide Thin-Film Transistors and Circuits With Rapid Thermal Annealing Process

Abstract

We report on high-performance ink-jet-printed amorphous zinc-tin-oxide (a-ZTO) thin-film transistors (TFTs) and simple inverter circuits. The solution-processed a-ZTO layer was directly printed on source/drain electrodes and then thermally treated by using rapid thermal annealing process. The ink-jet-printed a-ZTO TFTs (W/L = 100 μm/10 μm) have shown a carrier mobility of 4.98 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V · s with an on/off current ratio that is greater than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> and a subthreshold slope of 0.92 V/dec. The a-ZTO TFT-based inverter operation was good with acceptable logic level conservation.