Stable, Solution-Processed, High-Mobility ZnO Thin-Film Transistors

Abstract

A stable, high-mobility ZnO thin-film semiconductor was fabricated by thermal treatment of a solution-deposited thin film from a solution of Zn(OAc)2/2-ethanolamine in methoxyethanol. This ZnO thin-film semiconductor was composed of closely packed ZnO single crystals (∼30 to 50 nm) having a hexagonal structure assuming a preferred orientation with its c-axis perpendicular to the substrate. Field-effect mobility of 5−6 cm2 V-1 s-1 and current on-to-off ratio of 105−106 were demonstrated with this ZnO thin-film semiconductor in thin-film transistors.