Optics Letters · 2008 · 24 citations · 12 references
Wide-bandgap SemiconductorUltraviolet LightSimultaneous DetectionEngineeringFlame DetectionDual-band DetectorOptical PropertiesInfrared RadiationInfrared OpticInstrumentationHealth SciencesPhotonicsUv RadiationRadiation DetectionPhysicsAluminum Gallium NitrideSingle Gan/gaaln HeterojunctionCategoryiii-v SemiconductorSolar AstronomyUv-vis SpectroscopyInfrared SensorSpectroscopyApplied PhysicsGan Power DeviceOptoelectronics
Results are presented for a dual-band detector that simultaneously detects UV radiation in the 250-360 nm and IR radiation in the 5-14 microm regions with near zero spectral cross talk. In this detector having separate UV- and IR-active regions with three contacts (one common contact for both regions) allows the separation of the UV and IR generated photocurrent components, identifying the relative strength of each component. This will be an important development in UV-IR dual-band applications such as fire-flame detection, solar astronomy, and military sensing, eliminating the difficulties of employing several individual detectors with separate electronics-cooling mechanisms.
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AlGaN ultraviolet photoconductors grown on sapphire
D. Walker, X. Zhang, Patrick Kung et al. · Applied Physics Letters · 1996 · 181 citations
Wide-bandgap Semiconductor, Electrical Engineering, Optical Materials +10
Ga N ∕ Al Ga N ultraviolet/infrared dual-band detector
Gamini Ariyawansa, M. B. M. Rinzan, Mustafa Alevli et al. · Applied Physics Letters · 2006 · 69 citations · Full text
Wide-bandgap Semiconductor, Optical Materials, Engineering +18