Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 13 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsEtching ProcessesOxide SemiconductorsSemiconductor Device MaterialsSemiconductor SurfacesSurface PassivationThin Film EtchingPassivationPassivation Of SemiconductorsPassivation TechniquesThin Oxide FilmsThin Oxide LayersWedge ShapeWet Chemical EtchingWet Etching
GaAs tip and wedge-shaped field emitter arrays were fabricated by a wet etching technique on a (100) GaAs substrate. Two chemical solutions whose compositions were chosen for their isotropy features were investigated: HCl:H2O2:H2O (40:4:1) and HF:HNO3:H2O (1:1:2). When progressively polarized and after a working period of stabilization, the GaAs tip or wedge arrays are found to supply a stable emission current, with fluctuations not exceeding 3% over some hours. The analysis of the surface before emission shows the presence of a thin oxide layer which is suggested to act as a passivation layer.
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Simulation and design of field emitters
R. B. Marcus, Ken K. Chin, Yixuan Yuan et al. · IEEE Transactions on Electron Devices · 1990 · 55 citations