The effect of the X conduction band minima on resonant tunnelling and charge build-up in double barrier structures based on n-GaAs/(AlGa)As

GaAs, AlAs, and Al<i>x</i>Ga1−<i>x</i>As: Material parameters for use in research and device applications

Sadao Adachi · Journal of Applied Physics · 1985 · 3.3K citations

Engineering, Materials Engineering, Materials Science +17

Matrix method for tunneling in heterostructures: Resonant tunneling in multilayer systems

D. Y. K. Ko, J C Inkson · Physical review. B, Condensed matter · 1988 · 276 citations

Engineering, Electrical Engineering, Condensed Matter Physics +15

Resonant tunneling and intrinsic bistability in asymmetric double-barrier heterostructures

A. Zaslavsky, V. J. Goldman, D. C. Tsui et al. · Applied Physics Letters · 1988 · 152 citations

Engineering, Electrical Engineering, Microelectronics +16

AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio

C.I. Huang, Michael J. Paulus, C. Bozada et al. · Applied Physics Letters · 1987 · 138 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Tunneling through indirect-gap semiconductor barriers

E. E. Méndez, E. Calleja, W. I. Wang · Physical review. B, Condensed matter · 1986 · 112 citations

Engineering, Materials Science, Condensed Matter Physics +16