Extended resolution for lateral structuring with laser interference gratings using high-index input coupling

Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

D. E. Aspnes, A. A. Studna · Physical review. B, Condensed matter · 1983 · 4K citations

Natural Sciences, Materials Engineering, Materials Science +17

Optical technique for producing 0.1-μ periodic surface structures

C. V. Shank, R. V. Schmidt · Applied Physics Letters · 1973 · 90 citations

Natural Sciences, Materials Engineering, Materials Science +15

Modelling the optical response of surfaces measured by spectroscopic ellipsometry: application to Si and Ge

M. K. Kelly, Stefan Zollner, Manuel Cardon · Surface Science · 1993 · 54 citations

Natural Sciences, Materials Science, Physics +14

Lateral structuring of silicon thin films by interference crystallization

M. Heintze, P. V. Santos, Christoph E. Nebel et al. · Applied Physics Letters · 1994 · 51 citations

Engineering, Materials Engineering, Materials Science +17

Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings

M. K. Kelly, Christoph E. Nebel, M. Stutzmann et al. · Applied Physics Letters · 1996 · 20 citations

Engineering, Materials Science, Physics +14