Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings

Abstract

A two-dimensional quantum well structure grown by molecular beam epitaxy has been laterally structured with an interference pattern from a high-energy pulsed laser. The resulting thermal grating produces a reduction in the carrier density, which causes a lateral modulation in the band levels, with a period of 380 nm. Photoluminescence spectroscopy has been used for characterization.